Abstract
ABSTRACTThe feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
