Abstract
The I-V characteristics of the individual subcells of a monolithic Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction solar cell have been extracted from measurements of the electroluminescence peak intensity as a function of the electroluminescence injection current. By using the spectral reciprocity relation between the electroluminescence and the quantum efficiency, the individual subcell I-V characteristics were derived. It is shown that the subcell dark I-V characteristics and the subcell illuminated I-V characteristics are accessible under variable spectral illumination conditions.
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