Abstract
Tunneling characteristics of double-barrier diodes with a restricted lateral dimension are studied. When a large number of closely spaced emitter subbands contribute to the tunneling, the current versus voltage characteristics exhibit a series of peaks separated by the voltages that correspond to subband splittings in the double-barrier region. When the lowest emitter subband mainly contributes to the tunneling, they exhibit peaks separated by approximately twice the voltages that correspond to the subband splittings in the double-barrier region. These differences can be explained by the effects of mixing two-dimensional emitter subbands with one-dimensional subbands in the double-barrier region.
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