Abstract
The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer organic crystal, ferroelectric HfZrOx gating and van der Waals fabrication, we realize flexible OTFTs that simultaneously deliver high transconductance and sub-60 mV/dec switching, under one-volt operating voltage. The overall optimization of transconductance, subthreshold swing and output resistance leads to transistor intrinsic gain and amplifier voltage gain over 5.3 × 104 and 1.1 × 104, respectively, which outperform existing technologies using organics, oxides and low-dimensional nanomaterials. We further demonstrate battery-powered, integrated wearable electrocardiogram (ECG) and pulse sensors that can amplify human physiological signal by 900 times with high fidelity. The sensors are capable of detecting weak ECG waves (undetectable even by clinical equipment) and diagnosing arrhythmia and atrial fibrillation. Our sub-thermionic OTFT is promising for battery/wireless powered yet performance demanding applications such as electronic skins and radio-frequency identification tags, among many others.
Highlights
The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics
Organic thin-film transistors (OTFTs) have been extensively pursued for printable and flexible electronic applications owing to their intrinsic flexibility and lowcost processing[1,2,3,4,5,6]
This leads to low transconductance and intrinsic gain (Ai 1⁄4 gm Á r0, where r0 is output resistance)
Summary
The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. By combining solution-processed monolayer organic crystal, ferroelectric HfZrOx gating and van der Waals fabrication, we realize flexible OTFTs that simultaneously deliver high transconductance and sub-60 mV/dec switching, under one-volt operating voltage. A transition from negative to positive drain-induced barrier lowing (DIBL) was theoretically predicted and experimentally observed in NC transistors[16,29] This would lead to infinite r0 and intrinsic gain near the transition region, which is desirable for high-gain analog amplifiers. The uniform film morphology and van der Waals (vdW) integration of metal electrodes[31] ensure direct and damage-free contact with the channel, giving contact resistance below 60 Ωcm Together, these systematic optimizations significant improve the performance and power consumption of OTFTs, and deliver the highest gain for any TFT technologies. Our subthermionic OTFTs are low-temperature solution processed, scalable to large area and compatible with flexible substrates, which allow us to fabricate integrated wearable sensors health monitoring and diagnosis
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