Sub Terahertz Self-oscillations of Electron Population Depletion in Conduction Band as The Reason for Ultrafast Self-modulations of Intrinsic Stimulated Emission and Fundamental Light Absorption in GaAs

Abstract

During picosecond photogeneration of electron‐hole plasma (EHP) in GaAs, intensive picosecond emission arises. Self‐modulations of emission characteristics and of light fundamental absorption are found out. Quantitative estimations are made, confirming that the self‐modulations are caused by sub terahertz self‐oscillations of electron population depletion in conduction band. Expression for the frequency of self‐oscillations of population depletion is obtained. The received results, seemingly, reveal the occurrence of a new type of waves in GaAs, i.e., sub terahertz autowaves of carrier population depletion in energy space, a new type of collective excitation of carriers and a new form of EHP instability.