Sub Ten Micron Channel Devices Achieved by Vertical Organic Thin Film Transistor

Abdul Rauf Khan Abdul Rauf Khan,S.s.k Iyer S.S.K Iyer

doi:10.5121/vlsic.2011.2307

Abstract

Sub Ten Micron Channel Devices Achieved by Vertical Organic Thin Film Transistor

Highlights

Since the last 30 years, OTFT have gained a high interest due to its potential application in small and large area electronics and low cost flexible display applications
Despite the fact that OTFT cannot compete with inorganic single crystalline TFT performance, but still OTFT have reached mobility’s of 1.5 [cm2/Vs] which has been achieved in pentacene based top contact OTFT and current on/off ratio greater than 107, and sub threshold slope < 0.3 V/decade [1, 4]
The room temperature drift mobilities are found to range from 0.0005 to 0.0006 cm2/Vsec for holes in the p-type material [3] which is comparable with the mobility which we get in pentacene based top contact OTFT

Summary

INTRODUCTION

Since the last 30 years, OTFT have gained a high interest due to its potential application in small and large area electronics and low cost flexible display applications. Since the first report on OTFT in 1986, which was based on PT polymer with mobility of 10−5[cm2/Vs] [1], great progress has been made in synthesis of new organic semiconductors and insulators materials, improving manufacturing techniques and in development of new TFT structures. The room temperature drift mobilities are found to range from 0.0005 to 0.0006 cm2/Vsec for holes in the p-type material [3] which is comparable with the mobility which we get in pentacene based top contact OTFT. 2. The processing of top contact OTFT is low cost and does not require sophisticated tools, which are required in the Si based TFT processing steps. Depositing P3HT and gold at an angle to get the top contact vertical OTFT on the steep step [13]

OPERATING PRINCIPLE

PENTACENE DEPOSITION

OUTPUT AND TRANSFER CHARACTERISTICS

CONCLUSION AND FUTURE WORK