Abstract
We demonstrate a submicrometer-scale hydrogenated amorphous silicon (a-Si:H) waveguide with a record low propagation loss of 0.60 ± 0.02 dB/cm because of the very low infrared optical absorption of our low defect a-Si:H film, the optimized waveguide structure and the fabrication process. The waveguide has a core with a thickness of 440 nm and a width of 780 nm that underlies a 100-nm-thick ridge structure, and is fabricated by low-cost i-line stepper photolithography and with low-temperature processing at less than 350°C, making it compatible with the backend process of complementary metal oxide semiconductor (CMOS) fabrication.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.