Abstract
Detailed lithographic data has been obtained for a series of high resolution i-line acid-hardened negative photoresists. These resists consist of a phenolic polymer, an acid-activated crosslinker, a photoacid generator (PAG), and an i-line sensitizer. Imaging to 0.40 μm has been achieved for both a dyed and an undyed version of this resist at exposure doses <100 mJ/cm2 using a 0.45 NA i-line exposure tool. This has been demonstrated in a variety of developers, including 2.38% TMAH. Using the dyed resist, 0.5 μm lines with straight sidewalls have been imaged on aluminum substrates. Swing curves and linearity data, as well as focus and exposure latitudes, are reported.
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