Abstract
This paper presents a novel SU-8 micromachining process for MEMS series switch fabrication. The switch is designed with a clamped–clamped SU-8 (5 µm)/Cu (2 µm)/SU-8 (3 µm) beam structure driven by electrostatic force, which is fabricated on a silicon substrate with a resistivity of ∼5 Ω cm. Experimental results show that the switch can exhibit better than −4.48 dB insertion loss and −28.2 dB isolation up to 12 GHz. Such a large insertion loss is mainly caused by substrate loss which can be further reduced down to −0.75 dB as long as the substrate resistivity is increased up to 100 Ω cm.
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