Studying Tunability of 780 and 655 nm Semiconductor Lasers in Littrow Configuration

Abstract

Tunable external cavity diode lasers (ECDLs) have been broadly developed. They have different applications in various fields of science. In this paper tunability of semiconductor lasers (780 nm and 655 nm) are studied. Tuning ranges of 149 and 26 angstrom were demonstrated for 780 and 655 nm lasers, respectively. The Littrow configuration has been used in this experiment. A diffraction grating, a cooling system, a power supply and opto-mechanical components have been used to do so. The spectrum of the output beam of the laser and the power of the output beam of the laser have been measured and reported by means of the spectrometer and the power meter, respectively.