Abstract
The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key parameters like the current and resistance levels of the cell in on and off states. The origin of the variability of the switching parameters was investigated in terms of the involved physical processes. The simulations also confirm the multilevel cell operation capabilities of ReRAM devices.
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