KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices

Abstract

This paper presents a physical model based on charge transport in order to investigate the electroforming and switching processes of ReRAMs. This model is based on the generation and annihilation of oxygen vacancies (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ö</sub> ) along the metal-oxide interfaces and their migration through the oxide. The major driving forces governing these processes are the electric field, temperature and temperature gradient. Our simulations reproduce the main switching characteristics like the abrupt set and gradual reset processes. The variability of the switching parameters is also studied here as one of the major challenges of ReRAM mass production.