Abstract
The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 °C) up-to135 °C and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I–V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 °C, down to 0.163 A, at 135 °C. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.
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