Abstract
A set of AgxCu1 – xGaSe2 (0 ≤ x ≤ 1) solid solution powders has been prepared by solid-state synthesis. Using a combination of X-ray diffraction analysis and Raman spectroscopy, it has been found that the samples have a single-phase tetragonal structure (space group I-42d). It has been shown that their crystal lattice parameters do not follow Vegard’s law up to x ≈ 0.4. It has been revealed that the band gap of the samples also changes nonlinearly: initially it decreases and then increases. Studies of the low-temperature luminescence and microwave photoconductivity decay spectra have shown that a set of samples with x of 0 to ~0.4 and further in the region with x > 0.4 is characterized by an increase in the photogenerated current carrier lifetime in AgxCu1 – xGaSe2 powders. The observed effect is apparently attributed to the replacement of deep charge carrier traps, such as selenium vacancies, by shallower cation vacancies.
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