Abstract
The carrier behavior in CuInS2 thin films at femtosecond and microsecond time scales is discussed in detail. Transient absorption data suggests that the photo-generated carriers relax rapidly accompanied by a change in energy. The photo-generated charge carriers are extracted by a bias electric field E in the nanosecond transient photocurrent system. An applied E improves the efficiency of photon conversion to charge carriers and enhances the velocity of the extracted charge carriers. In addition, there exists a threshold of illumination intensity in the extraction process of charge carriers in the CuInS2 thin film, above which carrier recombination occurs. The corresponding loss further increases with illumination intensity and the recombination rate is almost independent of E. Our results provide useful insights into the characteristics of carriers in the CuInS2 thin film and are important for the operation of optoelectronic devices realized with these films.
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