Abstract
Effect of potentials and electric charges of copper and indium depositions to the photocurrent responses of CuInS2 thin film fabricated by electrodeposition followed by sulfurization were investigated. The characterization and elemental compositions of as-deposited Cu/In and CuInS2 thin films used X-RD and EDAX. Photocurrent responses of the obtained CuInS2 thin films were analyzed by linear sweep voltammetry (LSV) in europium solution under chopped irradiation. Photocurrent responses showed that fabricated CuInS2 thin films had p-type photoresponses. Indium deposition on copper was influenced by copper morphology resulted by a certain potential deposition. Increasing potential of indium deposition on copper and electric charge of copper deposition reduced photocurrent for the former but did not change photocurrent of CuInS2 for the latter.
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