Abstract
Spin–charge conversion is a spin–orbit coupling phenomena where electrical currents can generate transverse spin currents and vice versa. It is one of the central topics in spintronics and widely applied to manipulate the spin and charge degrees of freedom in materials. Previous research on spin–charge conversion was mainly carried out by transport measurements, which lies in the (quasi)equilibrium and DC/low-frequency limit. The recent development of THz emission spectroscopy applied to this field provides additional insights into the dynamics of the spin–charge conversion process, i.e., its ultrafast timescales. Here, the underlying physics and the latest progress of THz studies on spintronics are introduced. The technical details and some features of this technique are summarized, including spin current generation, signal detection, and data analysis. Finally, some possible developments are discussed as well as future research and applications.
Highlights
The generation, manipulation, and detection of spin currents is one of the most important topics in spintronics.[1]
In materials with strong spin–orbit coupling (SOC), such as heavy metals (HMs), topological insulators (TIs), two-dimensional transition metal dichalcogenides (2DTMDCs), and two-dimensional electron gas (2DEG), spin–charge conversion (SCC) originates from the spin Hall effect (SHE) or inverse spin Hall effect (ISHE) in bulk materials and the Rashba–Edelstein effect (REE) and inverse Rashba–Edelstein effect (IREE) at interfaces or surfaces
In spin pumping [Fig. 1(b)], the spin current is generated by ferromagnetic resonance (FMR), and a charge current can be induced via ISHE.[9,10,11,12,13,14,15,16,17,18]
Summary
The generation, manipulation, and detection of spin currents is one of the most important topics in spintronics.[1]. In materials with strong spin–orbit coupling (SOC), such as heavy metals (HMs), topological insulators (TIs), two-dimensional transition metal dichalcogenides (2DTMDCs), and two-dimensional electron gas (2DEG), SCC originates from the spin Hall effect (SHE) or inverse spin Hall effect (ISHE) in bulk materials and the Rashba–Edelstein effect (REE) and inverse Rashba–Edelstein effect (IREE) at interfaces or surfaces. Transport techniques, such as spin-torque ferromagnetic resonance (ST-FMR) and spin pumping, are used to measure the conversion between charge current and spin current/accumulation in ferromagnetic/non-magnetic (FM/NM) bilayer heterostructures. We give a perspective on the challenges and future directions in this field
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