Abstract
The formation and electromigration of melted aluminum-silicon (Al-Si) inclusions in single-crystalline silicon and polycrystalline aluminum has been studied. It is established that, in a temperature interval of T = 850–920 K, the contact melting in the Al-Si system is accompanied by the formation of melted zones (inclusions) with dimensions within 50–800 μm. These inclusions exhibit electrostimulated migration (j ≤ 4 × 106 A/m2) along the lines of an applied electric field. The dependence of the specific velocity of melted zones on their sizes has been measured for the electromigration of Al-Si inclusions in silicon and aluminum crystals. It is suggested that the mechanism of melted zone migration consists in the melting and crystallization due to thermoelectric phenomena at interphase boundaries and electromigration in the volume of inclusion. Effective charges on Al and Si atoms in Al-Si melts and the Peltier coefficients in the corresponding crystal-melt systems have been experimentally determined
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