Abstract
AbstractThe effect of constant magnetic fields on the formation and dynamics of molten Al–Si inclusions in silicon in the field of structural inhomogeneity of a crystal (the dislocation density-gradient field) is considered. The migration rates of liquid inclusions in crystals have been found experimentally under conditions of prevailing melting–crystallization mechanisms at the phase interfaces between the melt and matrix before and after magnetic exposure. It has been found that a preliminarily exposure of dislocation silicon samples in a constant magnetic field leads to an increase in the displacement speed of molten zones in the density-gradient field.
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