Abstract
Epitaxial films of cubic silicon carbide (n-3C-SiC) polytype grown on hexagonal (6H-SiC) polytype substrates by sublimation epitaxy in vacuum have been studied. The films of the best structural quality exhibit low-temperature photoluminescence related to the recombination of bound excitons. The results are compared to the available data for volume 3C-SiC crystals.
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