Abstract
A heterostructure of the p−-3C-SiC/n+-6H-SiC type with modulated doping was synthesized by sublimation epitaxy in vacuum. Features of the current-voltage characteristics and the electroluminescence spectra show evidence of quantum confinement effects in a triangular quantum well at the heterojunction. The results indicate that the proposed technology employing sublimation epitaxy in vacuum can be used to obtain quantum-confined structures based on silicon carbide.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
