Year-end Sale % OFF 
Abstract
In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through a short-time microwave post-annealing process. Comparing the unannealed and microwave-annealed samples whose temperature is controlled at 200–500 °C, APALD non-vacuum deposited film can be realized with a higher film deposition rate, which is beneficial for increasing the production throughput while at the same time reducing the operating cost of vacuum equipment at hand. Since the microwave has a greater penetration depth during the process, the resultant thermal energy provided can be spread out evenly to the entire wafer, thereby achieving the effect of rapid annealing. The film thickness is subsequently analyzed by TEM, whereas the chemical composition is verified by EDS and XPS. The negative fixed charge and interface trap density are analyzed by the C-V measurement method. Finally, the three major indicators of τeff, SRV, and IVoc are analyzed by QSSPC to duly verify the excellent passivation performance.
Highlights
At present, mainstream solar cells are predominantly represented by the so-called passivation of the emitter and rear contact (PERC) solar cells
FE-Transmission Electron Microscope (TEM) images of Al2 O3 deposited on a silicon substrate which reveal the details of the Si/Al2 O3 interface in the pristine condition and after the microwave annealing treatment conducted at a temperature ranging from 200–500 ◦ C
We used atmospheric pressure atomic layer deposition (APALD) independently developed by our group to deposit
Summary
Mainstream solar cells are predominantly represented by the so-called passivation of the emitter and rear contact (PERC) solar cells. PERC solar cells are among the typical solar cells with high efficiency [1,2,3]. The most distinctive feature goes to the implementation of the back passivation layer structure, which is used to effectively weaken the problematic role of the dangling bonds over the back of the silicon wafer, thereby mitigating the unwanted surface recombination-induced defects [4,5]. The silicon oxide (SiOx ) layer formed at the interface may play a key role in the origin of the negative fixed charge, which can reduce the surface recombination rate. It is still necessary to obtain a sound grasp of the passivation mechanism of the interfacial SiOx layer on the silicon surface [7,8]
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
