Abstract
Low-dose SIMOX wafers have attracted attention for their applications to VLSI with their reduced cost and higher crystal quality. However, evaluations of low-dose wafers have not been extensively reported except for some papers on the breakdown field of buried oxide. Because of their influences on the threshold voltage, subthreshold slope, reliability, and parasitic drain/source capacitance of SOI MOSFETs, the characterization of fixed oxide charge and interface trap densities at either buried oxide interface is especially important. In this paper, we compare the fixed oxide charge and interface trap densities in low-dose and high-dose SIMOX wafers through the electrical measurement of buried oxide capacitors and SOI MOSFETs.
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