Abstract
Single crystals of Bi2Se3 were grown by vapor phase technique using ammonium chloride (NH4Cl) as a transporting agent. The stoichiometry of the as-grown Bi2Se3 crystal was confirmed by energy-dispersive analysis of X-ray. The lattice parameters, crystallite size, and stacking fault probabilities were determined from X-ray powder diffractogram. The surface morphology of the as-grown single crystals was studied using AFM image. The Seebeck coefficient and resistivity variation from low (6 K) to near ambient temperature on these as-grown Bi2Se3 single crystals was measured. The Hall effect measurements were carried out at three different low temperatures. The obtained results are discussed in detail.
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