Abstract
In this paper, the analytical solution for temperature change and switching power of the thermo-optic switches with buried heater is achieved by Image Charge Method, and the influence of different structure parameters on the switching power, such as the offset distance away from the heater to the cladding oxide layer surface, the heater width and length, the thickness of cladding and buried oxide layer is studied in detail. Results show that the analytical solution of Image Charge Method is a convenient way of less computational time-consuming to solve temperature field of thermo-optic switches with buried heater, meanwhile, higher heat efficiency and lower switching power can be obtained with narrower, buried heater of the thermo-optic switches, which may provide guides in thermo-optic switches’ designs and their applications.
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