Abstract

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 °C in NH 3 ambient. While in N 2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 °C, and the activation energy of InN decomposition was estimated to be 2.1±0.1 eV. Thermal stability of InN when annealing in NH 3 ambient during temperature altering would be very sensitive to ramping rate and NH 3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN.

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