Abstract
The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show -phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.
Highlights
Wide gap semiconductor films/Si heterojunction structures have been intensively studied these days for various applications including solar cells, light emission devices, UV detectors, and display technology [1,2,3]
Interface states of the heterojunction is difficult to overcome. Among all of these p-type semiconductors, CuSCN of p-type plays an role in the wide gap emitter material, having a band gap of 3.6 eV, which has been used in extremely thin absorber solar cells (ETAs) as a p-type hole conducting material [4,5,6,7,8]
Aé et al [8] reported a hybrid flexible vertical nanoscale diodes, which formed by n-type ZnO and p-type CuSCN embedded in polymer foil, by using electrochemical deposition technique
Summary
Wide gap semiconductor films/Si heterojunction structures have been intensively studied these days for various applications including solar cells, light emission devices, UV detectors, and display technology [1,2,3]. Interface states of the heterojunction is difficult to overcome. Among all of these p-type semiconductors, CuSCN of p-type plays an role in the wide gap emitter material, having a band gap of 3.6 eV, which has been used in extremely thin absorber solar cells (ETAs) as a p-type hole conducting material [4,5,6,7,8]. [9], they presented a light-emitting diodes consisting of n-ZnO nanorods and p-CuSCN prepared by electrochemical method. P-CuSCN/n-Si heterojunctions are fabricated by using simple solution method at low
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