Abstract
ZnO epitaxial thin film was successfully obtained by oxidation of ZnS epitaxial thin film with the orientation of (0002),[1120]ZnO∥(111),[110]Si. The ZnS film was completely oxidized at 800°C for 1 h in O 2 flow. An interface layer was formed between the ZnO layer and the Si substrate by excess annealing. The ZnO layer showed near ultraviolet emission due to exciton in addition to visible emission, and by annealing for 5 h, strong exciton emission without the visible emission.
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