Abstract
The Raman spectra of polystalline Er2O3 films on Si (001) substrates annealed at different temperatures in O2 atmosphere were investigated. Seven Raman lines are identified in annealed Er2O3 films on Si (001) substrates. Two broad peaks larger than 600 cm-1 are detected, and their origination is discussed. Raman spectroscopy is proved to be a simple and sensitive method to characterize the structures of Er2O3 films on Si substrates.
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