Abstract
The structure of hydrogenated amorphous silicon-tin alloy films has been systematically investigated as a function of substrate temperature T s. X-ray diffraction, ir absorption and other characterization measurements were performed. It is shown that most of the Sn atoms go into substitutional Si sites at T s <220° C whereas a large fraction of β-Sn precipitates are formed at T s⩾220°C. The hydrogen as an active chemical agent of the deposition process plays an important role in this structural change.
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