Abstract
In order to prepare good quality Pb(Zr,Ti)O3 (PZT) thin films, we consider the method of alternately growing PZT thin films on Pt (111)/Ti/SiO2/Si (100) substrates by pulsed laser deposition (PLD) and sol-gel. In this work, we conducted comparative experiments on different film preparation methods, and 1.0 um thick PZT film was grown on platinized silicon wafers by an alternate PLD and sol-gel method. The microstructure and electrical properties of the films is analyzed. Through the study of X-ray diffraction, SEM, AFM, PFM, and ferroelectric testing, it is found that the alternating growth of a film by the alternate PLD and sol-gel method has good compactness, excellent ferroelectric properties, and smaller leakage current compared to film prepared by the sol-gel method alone.
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