Study on the Performance of Superlattice-Like Thin Film V2O5/Sb in Phase Change Memory

Abstract

Compared with Sb film, V2O5/Sb superlattice-like thin film has better thermal stability (Tc ∼ 240 °C, T10-year ∼ 172.9 °C). V2O5/Sb thin film is suppressed by the multiple interfaces and the grains become smaller. The vibrational peaks of Sb-Sb and V–O bonds are observed by Raman measurement. The interaction between the two crystal systems improves the stability of the V2O5/Sb membrane. The multilayer structures before and after crystallization were observed by transmission electron microscopy. The ultralow-power (2.25 × 10−12 J) and ultrafast-speed (8 ns) has been achieved for V2O5(1 nm)/Sb(9 nm)-based phase change memory device.