Abstract
A phase-change random access memory device, consisting of GeSb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sub> based chalcogenide, TiW electrode and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectric layer, was fabricated in order to investigate the electrical characteristic and failure mechanism. Amorphous Si-doped GeSb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sub> with high crystallization temperature (235°C) exhibits extremely good thermal stability. Ten year data retention of 164°C shows the remarkable device reliability. After the continuous voltage sweeping of 1.6 V, an unexpected failure was observed via transmission electron microscopy (TEM) image. The failure mechanism was clarified and Si-doped GeSb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sub> based PRAM material is concluded to be potential in virtue of its improved device reliability and thermal stability.
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