Abstract
Electrical manipulation of room temperature ferromagnetism (RTFM) has been observed in several kinds of transition metal doped diluted magnetic oxide films. We demonstrate using X-ray photoelectron spectroscopy that the redistribution of the oxygen vacancies in a film under an electric field plays a crucial role in the enhancement of the RTFM. Based on a detailed analysis of the X-ray photoelectron spectroscopy data for the oxygen vacancy distribution in different resistive states, a unified mechanism has been proposed. This work points out a new direction for improving the magnetic properties of these materials by controlling oxygen vacancies in the interior of the films.
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