Abstract
Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.
Highlights
GaN-based III-V compound semiconductor thin films are important third-generation semiconductor materials, which are widely used in the manufacture of blue-violet light-emitting diodes, semiconductor lasers and high-frequency, high-power electronic equipment [1–6]
100 sets of input and output values are obtained by the design of experiment (DOE) method, and the response surface model is constructed; optimal results are obtained by using a response surface model (RSM) and a genetic algorithm
The results in figure 3 present the flow field, temperature field and deposition rate of the Metal-organic chemical vapour deposition (MOCVD) reaction chamber under the conditions given in table 1
Summary
GaN-based III-V compound semiconductor thin films are important third-generation semiconductor materials, which are widely used in the manufacture of blue-violet light-emitting diodes, semiconductor lasers and high-frequency, high-power electronic equipment [1–6]. The quality of thin film is related to many parameters, such as the gas inlet flow rate, reactor pressure, rotation speed of the base and temperature of the substrate. Theodoropoulos and others investigated the chemical mechanism model [20,21] to study the reaction chamber and coupled field, and proposed a model for the influence of different process parameters on the deposition rate under different conditions. With the improvement of GaN-MOCVD growth mechanism models, scholars such as Mitrovic studied the influence of different process parameters on deposition rate and optimized the design of reaction chambers [22–31]. We present the rotation speeds of substrate and wafers as the input variables, the deposition rates as outputs, and the variation coefficient of the deposition rates are used as a response. 100 sets of input and output values are obtained by the design of experiment (DOE) method, and the response surface model is constructed; optimal results are obtained by using a response surface model (RSM) and a genetic algorithm
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