Computational fluid dynamics modeling of a new high-pressure chemical vapor deposition reactor design

Abstract

The design of a new super-atmospheric pressure metal organic chemical vapor deposition (MOCVD) reactor with spatially separated source zones and rotating susceptor is proposed and analyzed using computational fluid dynamics (CFD) techniques to determine fluid transport phenomena and suitability for thin-film synthesis of group III nitrides. This High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) reactor is designed to permit high-temperature growth of high-indium content group III nitrides. This is made possible by increasing the partial pressure of nitrogen by up to two orders of magnitude in the system thereby increasing decomposition temperatures of the group III nitride thin film. The effects of rector design, chamber height, system pressure, inlet flow rate, and rotational speed are investigated and discussed. Flow instabilities arising from the heated and rotating susceptor traversing separate source zones are minimized. Growth rates of group III nitride materials synthesized in an HPS-CVD reactor are estimated to be enhanced by approximately a factor of 10 compared to an existing super-atmospheric MOCVD reactor due to improved reactor design thereby providing comparable growth rates to current atmospheric MOCVD systems.