Abstract
ZnO film‐based ultraviolet (UV) detector was fabricated by photoassisted peak force tunnel atomic force (PFTUNA) on fluorine tin oxide (FTO) substrate. The PFTUNA current in dark and in UV light was ~0.1 and 2.0 nA, respectively. The UV sensitivity (photocurrent/dark current) is more than 20. The response time and the recovery time are ~0.12 and 0.32 s, respectively. The UV sensing mechanism is that the holes will transport to the ZnO surface to capture the adsorbed oxygen ions to weaken the depletion layer under UV illumination. The PFTUNA current between the tip and the ZnO film is consistent with the Richardson–Schottky (RS) thermionic emission model.
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