Abstract
Na2CO3—1.5 H2O2, KClO3, KMnO4, KIO3, and NaOH were selected for dry polishing tests with a 6H-SiC single crystal substrate on a polyurethane polishing pad. The research results showed that all the solid-phase oxidants, except NaOH, could decompose to produce oxygen under the frictional action. After polishing with the five solid-phase oxidants, oxygen was found on the surface of SiC, indicating that all five solid-phase oxidants can have complex tribochemical reactions with SiC. Their reaction products are mainly SiO2 and (SiO2)x. Under the action of friction, due to the high flash point temperature of the polishing interface, the oxygen generated by the decomposition of the solid-phase oxidant could oxidize the surface of SiC and generate a SiO2 oxide layer on the surface of SiC. On the other hand, SiC reacted with H2O and generated a SiO2 oxide layer on the surface of SiC. After polishing with NaOH, the SiO2 oxide layer and soluble Na2SiO3 could be generated on the SiC surface; therefore, the surface material removal rate (MRR) was the highest, and the surface roughness was the largest, after polishing. The lowest MRR was achieved after the dry polishing of SiC with KClO3.
Highlights
IntroductionAs a third-generation semiconductor material, SiC has excellent chemical and physical properties [1,2] and widely used in satellite communications, integrated circuits and consumer electronics [3,4,5]
Fixed abrasive tribochemical mechanical polishing is a fixed abrasive chemical-mechanical processing technology, which can use the abrasive and chemical additives in the polishing pad and the surface of the workpiece in a tribochemical reaction to change the surface of the workpiece material and chemical organization
The study can provide help to understand the mechanism of oxygen production and the tribochemical reaction mechanisms of SiC during fixed abrasive tribochemical mechanical polishing, providing aid regarding the selection of a solid-phase oxidant for the fixed abrasive tribochemical mechanical polishing pad and the formulation of a solid-phase oxidant for a fixed abrasive
Summary
As a third-generation semiconductor material, SiC has excellent chemical and physical properties [1,2] and widely used in satellite communications, integrated circuits and consumer electronics [3,4,5]. Fixed abrasive tribochemical mechanical polishing is a fixed abrasive chemical-mechanical processing technology, which can use the abrasive and chemical additives in the polishing pad and the surface of the workpiece in a tribochemical reaction to change the surface of the workpiece material and chemical organization. This mechanism achieves the efficient removal of its material; is the process increasingly gaining the attention of researchers [13]. The study can provide help to understand the mechanism of oxygen production and the tribochemical reaction mechanisms of SiC during fixed abrasive tribochemical mechanical polishing, providing aid regarding the selection of a solid-phase oxidant for the fixed abrasive tribochemical mechanical polishing pad and the formulation of a solid-phase oxidant for a fixed abrasive
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