Study on the mechanism of buffer absorbing energy of double-layer heterostructure based on viscoelastic materials for MEMS devices

Abstract

Under the high overload impact environment, MEMS devices are prone to failure due to their complex mechanical structure. Therefore, improving the sensor's resistance to high overload is crucial to ensure its normal service. The dynamic response model of the double-layer heterostructure is established based on high-impact accelerometers and second-order oscillation systems. The peak attenuation ratio of the inertial load was obtained to characterize the buffering and energy absorption properties of the structure. Through Ls-Dyna numerical simulation and overload impact tests, it was verified that the error was less than 6.67%. The double-layer heterostructure with an outer epoxy resin and inner polyurethane exhibited the best buffering performance among the tested structures, with a maximum improvement of 35.6% compared to the single-layer structure. The peak attenuation ratio of inertial load can reach 44%. These findings provide a theoretical foundation and technical support for the research and application of protective structures for MEMS sensors against high overload.