Abstract
The experiment result of American ITT company shows that the quick recombination velocity on the front surface of GaAs photocathode affects the quantum efficiency seriously. In order to explain this phenomenon theoretically, the quantum efficiency formula which include front surface recombination velocity is firstly deduced for reflection-mode GaAs photocathode by using integral deduction method, realize the evaluation of the photocathode parameters which cannot be detected directly, especially the quantum efficiency, provide a guidance to further study GaAs photocathode.
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