Study on The Influence Mechanism of TSV Structural Defects on High Frequency Transmission Characteristics

Abstract

Through silicon vias (TSV) technology is the most effective means to improve the multi-level interconnection transmission performance. However, different types of defects in TSV structure during service cause disparate effects on signal transmission, and the law and mechanism of the defects on signal transmission characteristics are not yet clear. In this paper, the Ansys HFSS electrical modeling simulation is carried out to study the effect of the model on the scattering parameters at 40 GHz with the variation of parameters such as coplanar waveguide length and insulation layer thickness. And the GSG(Ground Signal Ground)-TSV cavity and pinhole defects were mainly simulated to analyze the influence law and mechanism of different defects on signal transmission. It is shown that the transmission performance of GSG-TSV becomes better with increasing insulation thickness, and worse with increasing coplanar waveguide length, improves and then deteriorates with increasing GS-TSV spacing. Compared with fault-free GSG-TSV, the size and location of cavity fault hardly affect the transmission performance of GSG-TSV. The transmission performance of TSV with pinhole fault becomes worse with increasing pinhole height ‘hp’ and height from ground ‘wp’. The transmission performance of TSV with unaligned microsubstrate becomes worse.