Abstract
A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to a conventional field stop IGBT at the same on-state voltage and breakdown voltage. Moreover, compared to an IGBT using a trench filled with HK dielectric, the proposed device is more feasible to be fabricated and has a lower gate-to-anode capacitance, which can reduce the current and voltage oscillations during the turn-off transient.
Highlights
Modern world is heavily dependent on electric power
The insulated gate bipolar transistor (IGBT) with a deep trench filled with SiO2 and high-k dielectric film is proposed in this article
The proposed structure results in a large gate-to-anode capacitance, which can accelerate the depletion of the N-drift region during the turnoff transient
Summary
Modern world is heavily dependent on electric power. Much electric equipment is required to generate, transfer, and convert electric power. As one of the most popular power devices, the insulated gate bipolar transistor (IGBT) usually faces a crucial tradeoff between the on-state voltage (Von) and turn-off loss (Eoff). People have tried to fabricate the SJ-IGBT using the deep trench etching and refilling method [8], but the problem of charge imbalance [9] due to the fabrication inaccuracy is still severe. Another way to improve the IGBT is by introducing the high relative permittivity (high-k or HK) dielectric modulation [10]–[12] in IGBT (HK-IGBT) [13]. The other part of the deep trench is filled with SiO2 [14]
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