Abstract
The microstructure of He+-irradiation induced defects in tungsten was studied as functions of annealing temperature by means of scanning electron microscope (SEM) and Doppler broadening positron annihilation spectroscopy (DB-PAS). The results show that the S parameter become higher after helium implanted in tungsten. When the annealing temperature increases to 923 K, plenty of large size of holes and new types of defects could be found in this sample.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
