Abstract
The ferroelectric properties of UV irradiated and non-irradiated SBT thin films using photosensitive starting precursors were investigated. The observation of surface microstructure showed that UV irradiation and increase in anneal temperature induced the grain growth of SBT. The measured remnant polarization values of UV irradiated and non-irradiated SBT films after anneal at 700oC were 5.8 and 4.7 )C/cm2 and after anneal at 750oC, the values were 10.8 and 9.3 )C/cm2, respectively.
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