Abstract
The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm 2 and 3.48 × 10 −8 A/cm 2 after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm 2 and 6.94 × 10 −8 A/cm 2 after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 10 10 switching cycles.
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