Growth and Characteristics of IrO2 Thin Films for Application as Bottom Electrodes of Ferroelectric Caplacitors

Abstract

In this work, thin films as bottom electrode of ferroelectric capacitors were deposited and characterized. The films deposited in the conditions of 25, 40 and 50% oxygen ambient by sputtering method were annealed at 600, 700 and , respectively. It was found that the crystallinity and the surface morphology of films affected the surface properties and electrical properties of SBT thin films prepared by the MOD method. With increasing temperature, the crystallinity and the roughness of films were also increasing. This increasing of roughness degraded the surface properties and electrical properties of SBT films. We found an optimum condition of films as bottom electrode for ferroelectric capacitor at 50% oxygen ambient and annealing temperature. Electrical characterizations were performed by usingbottom electrodes grown at an optimum conditions. The remanent polarization () of the Pt/SBT///Si structure was 2.75 C/ at an applied voltage of 3 V. The leakage current density was $1.0610^{-3}$ A/ at an applied voltage of 3 V.