Abstract
We have done the fabrication of NiFe2O4 nanoparticle at room temperature under the variation of magnetic field. Here, we have measured current -voltage (I-V) characteristics and the impedance spectroscopy of our device. From our experiment, it has been found that our sample shows magnetoresistance with positive value and magnetic field dependent electrical hysteresis. I-V curve reveals the existence of electrical memory effect in our sample. The memory window of our sample is found to inversely proportional to the applied magnetic field thus, electrical hysteresis of our sample has been found to vary under the application of the magnetic field. In our work we have shown the magnetic field dependent electrical hysteresis and impedance spectroscopy of our sample.
Published Version
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