Abstract
Based on our empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a useful method for determining the composition profile of an epitaxy layer from room-temperature infrared transmittance spectroscopy is presented. The compositional depth non-uniformity of Hg1-xCdxTe film samples grown by liquid-phase epitaxy, metal-organic chemical vapour deposition and molecular beam epitaxy techniques is determined using this method and compared with that from secondary ion mass spectroscopy and X-ray microprobic measurements.
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