Abstract
An amorphous Ta–Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu∕Ta50Zr50∕Si stack with 50nm thick amorphous film was prepared by cosputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650°C. Examining the thermal stability of the barrier revealed that the crystallization of these amorphous Ta50Zr50 films occurred at 800°C, higher than its failure temperature. The results show that the existence of Cu layer first induced the formation of TaSi2 and ZrSi2 crystalline phases at 650°C, followed by the formation of Cu3Si. A failure mechanism of the diffusion barrier is proposed based on the relation between the thermal stress and the activation energy of barrier/substrate interface reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
