Study on Switching Characteristics of Reversely Switched Dynistor With an N-Buffer Layer

Cheng Liu Cheng Liu,Haiyang Wang Haiyang Wang,Lin Liang Lin Liang,Yuehui Yu Yuehui Yu,Qiao Zhang Qiao Zhang,Changdong Chen Changdong Chen

doi:10.1109/tps.2015.2430355

Abstract

In this paper, an N-buffer layer has been introduced into the reversely switched dynistor (RSD). The relationship between the buffer layer and the device characteristics, together with the interaction among structural parameters, is discussed by the orthogonal method in detail. Based on the simulation results, buffer thickness W n-buffer and buffer concentration N n-buffer , N + emitter concentration N n+ , and P + emitter concentration N p+ at anode can all affect the maximum turn-ON voltage U Fmax on the RSD. Furthermore, the U Fmax increases with increasing W n-buffer or decreasing N p+ , and if N n-buffer becomes higher continuously, the U Fmax slightly decreases first, and then dramatically goes up. Besides, the interaction between N n-buffer and W n-buffer has a dramatic impact on the U Fmax . When N n-buffer = 1E17 cm -3 , W n-buffer = 10 μm, N p+ = 1E18 cm -3 , and N n+ = 1E20 cm -3 , U Fmax reaches its minimum in all the simulations. The experimental results verify the device characteristic's improvement by introducing the buffer layer.

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